Laser characterization of the Yb3+:Y2SiO5(Yb:YOS)

The spectroscopic properties of Yb3+:Y2SiO6 (Yb:YOS) and its laser potential for 1 mu m emission are investigated. Crystals containing 5% of Yb3+ ions (9.2x10(20)ions/cm(3)) with very good optical quality have been grown by the Czochralski process. An energy-level diagram for Yb3+ in this host is proposed, taking into account electronphonon coupling phenomena. A broad emission, from 0.98 mu m to 1.1 mu m, with a lifetime of 1.5 ms have been measured and the laser parameters indicate that this host could be well adapted for high power lasers. In good agreement with the spectroscopic predictions, laser oscillation under Ti:sapphire laser pumping was observed for the first time, on uncoated crystals in a plano-concave cavity. A slope efficiency of 44 % and a laser threshold around 160 mW have been obtained. This laser material appears very attractive for the development of new Yb3+ sources.