Avalanche, Joule Breakdown and Hysteresis in Carbon Nanotube Transistors

被引：8
|
作者：
Pop, Eric [1 ]
Dutta, Sumit
Estrada, David
Liao, Albert
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, 2258 Micro & Nanotechnol Lab,208 N Wright St, Urbana, IL 61801 USA
来源：
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年
关键词：
carbon nanotube; avalanche; hysteresis; breakdown;
D O I：
10.1109/IRPS.2009.5173287
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
We explore several aspects of reliability in carbon nanotube transistors, including their physical dependence on diameter. Avalanche behavior is found at high fields (5-10 V/mu m), while Joule breakdown is reached at high current and heating, in the presence of oxygen. Finally, we describe a method for minimizing hysteresis effects via pulsed measurements.
引用
收藏
页码：405 / +
页数：2
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