High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C

In the present work, we testify a strategy to achieve high-performance ZnO thin film transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more than 100 degrees C. Interestingly, the ZnO TFTs exhibit superior electrical properties, including a field-effect mobility of 14.32 cm(2)V(-1)s(-1), a sub-threshold swing of 0.21 V/decade, and an on-to-off current ratio of 3.03 x 10(7). Also, ideal uniformity, hysteresis property, contact resistance, and stability are achieved. Threshold voltage shift (Delta V-TH) under positive and negative bias stress are 0.17 and -0.18 V, respectively. Moreover, the ZnO TFTs manifest good mechanical performance at a bending radius of 10 mm. We expect that our findings propel practical application of the oxide TFTs in flexible electronics.