High-performance ZnO thin-film transistors fabricated at low temperature on glass substrates

被引：24
|
作者：
Liu, C. C. [1 ]
Chen, Y. S. [1 ]
Huang, J. J. [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 106, Taiwan
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 14期
关键词：
D O I：
10.1049/el:20061518
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance enhancement-mode ZOO thin-film transistor (TFT) on a glass substrate is demonstrated. The ZOO thin film is deposited by RF magnetron sputtering with the presence of O-2 at low deposition rate and low temperature. The I-DS is as high as 1 mA when biased at the saturation region V-DS = 10-20 V and V-GS = 5 V without any post-thermal anneal. The I-on/I-off ratio is 3 x 10(6). The results are among the best ZnO TFTs ever obtained.
引用
收藏
页码：824 / 825
页数：2
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