Electro-Optic KTN Deflector Stabilized with 405-nm Light Irradiation for Wavelength-Swept Light Source

被引：0

作者：

Sasaki, Yuzo ^{[1
]}

Toyoda, Seiji ^{[1
]}

Sakamoto, Takashi ^{[1
]}

Yamaguchi, Joji ^{[1
]}

Ueno, Masahiro ^{[1
]}

Imai, Tadayuki ^{[1
]}

Sakamoto, Tadashi ^{[1
]}

Fujimoto, Masatoshi ^{[2
]}

Yamada, Mahiro ^{[2
]}

Yamamoto, Koei ^{[2
]}

Sugai, Eiichi ^{[3
]}

Yagi, Shogo ^{[3
]}

机构：

[1] NTT Corp, NTT Device Innovat Ctr, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

[2] Hamamatsu Photon KK, Hamakita Ku, 5000 Hirakuchi, Hamamatsu, Shizuoka 4348601, Japan

[3] NTT Adv Technol Corp, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430124, Japan

来源：

OPTICAL COMPONENTS AND MATERIALS XIV | 2017年 / 10100卷

关键词：

KTN; Electro-optic deflector; wavelength-swept light source; OPTICAL COHERENCE TOMOGRAPHY;

D O I：

10.1117/12.2251413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a highly stable electro-optic KTa1-xNbxO3 ( KTN) deflector by enhancing electron transportation through KTN crystal. The amount of current is increased with 405-nm light irradiation to rapidly generate a stable refractive-index change, which induces deflection. The deflection angle is set at 160 mrad within tens of seconds and is kept at that angle for 3,000 hours. The developed deflector has been applied to a wavelength-swept light source to measure the thickness of Si wafers with a 3.6-mm optical length. The precision of 0.1-mu m has been continuously achieved corresponding to the stability of the KTN deflector.

引用

页数：6

共 25 条

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