Effect of Zn-Doping on the Tunable Behavior of (Pb0.6Sr0.4)TiO3 Thin Films

被引：3
|
作者：
Zheng, Z. [1 ]
Zhao, H. J. [1 ]
Li, X. T. [1 ]
Weng, W. J. [1 ]
Han, G. R. [1 ]
Ma, N. [1 ]
Du, P. Y. [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
FERROELECTRICS | 2009年 / 387卷
关键词：
PST thin films; Dielectric; Tunability; DIELECTRIC-PROPERTIES;
D O I：
10.1080/00150190902967147
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
(Pb0.6Sr0.4)ZnxTi1-xO3-x thin films were prepared by the alkoxide-based sol-gel process using dip-coating method on ITO/glass substrate. The structure and dielectric property of Zn doped PST thin films have been studied. The perovskite phase forms perfectly in the PST thin films with and without Zn-doping respectively. The tetragonality of the phase structure decreases gradually with increasing Zn from x = 0 to x = 0.4. Ferroelectric nature of the thin film is confirmed by Cp-V butterfly loop and it becomes weaker with increasing Zn into the PST thin films. The dielectric loss of the thin film is expectedly decreased from x = 0 to x = 0.4.
引用
收藏
页码：204 / 209
页数：6
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