Strain-induced switching of heat current direction generated by magneto-thermoelectric effects

被引:13
|
作者
Ota, Shinya [1 ,2 ]
Uchida, Ken-ichi [3 ,4 ,5 ]
Iguchi, Ryo [3 ]
Pham Van Thach [6 ,7 ]
Awano, Hiroyuki [6 ]
Chiba, Daichi [1 ,2 ,8 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[4] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan
[5] Univ Tokyo, Dept Mech Engn, Bunkyo Ku, Tokyo 1138656, Japan
[6] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
[7] Vietnam Acad Sci & Technol, Inst Mat Sci, 18 Hoang Quoc Viet, Hanoi, Vietnam
[8] Osaka Univ, Ctr Spintron Res Network, Toyonaka, Osaka 5606671, Japan
关键词
D O I
10.1038/s41598-019-49567-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Since the charge current plays a major role in information processing and Joule heating is inevitable in electronic devices, thermal management, i.e., designing heat flows, is required. Here, we report that strain application can change a direction of a heat current generated by magneto-thermoelectric effects. For demonstration, we used metallic magnets in a thin-film form, wherein the anomalous Ettingshausen effect mainly determines the direction of the heat flow. Strain application can alter the magnetization direction owing to the magnetoelastic effect. As a result, the heat current, which is in the direction of the cross product of the charge current and the magnetization vector, can be switched or rotated simply by applying a tensile strain to the metallic magnets. We demonstrate 180 degrees switching and 90 degrees rotation of the heat currents in an in-plane magnetized Ni sample on a rigid sapphire substrate and a perpendicularly magnetized TbFeCo film on a flexible substrate, respectively. An active thermography technique was used to capture the strain-induced change in the heat current direction. The method presented here provides a novel method for controlling thermal energy in electronic devices.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] On the effects of the heat generated during an electric field-induced ferroelectric domain switching
    Kim, SJ
    Kim, S
    INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 2001, 38 (08) : 1311 - 1325
  • [42] Revealing Strain-Induced Effects in Ultrathin Heterostructures at the Nanoscale
    Sarwat, Syed Ghazi
    Tweedie, Martin
    Porter, Benjamin F.
    Zhou, Yingqiu
    Sheng, Yuewen
    Mol, Jan
    Warner, Jamie
    Bhaskaran, Harish
    NANO LETTERS, 2018, 18 (04) : 2467 - 2474
  • [43] STRAIN-INDUCED EFFECTS ON THE PERFORMANCE OF ALGAINP VISIBLE LASERS
    HASHIMOTO, J
    KATSUYAMA, T
    YOSHIDA, I
    HAYASHI, H
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1863 - 1868
  • [44] STRAIN-INDUCED EFFECTS IN GAAS DIRECTIONAL COUPLER SWITCHES
    BENSON, TM
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6221 - 6222
  • [45] Magneto-thermoelectric effects in rectangular quantum wire with an infinitely high potential in the presence of electromagnetic wave (electron - acoustic phonon interaction)
    Tran Hai Hung
    Doan Minh Quang
    Nguyen Quang Bau
    Nguyen Vu Nhan
    43RD VIETNAM NATIONAL CONFERENCE ON THEORETICAL PHYSICS (NCTP-43), 2019, 1274
  • [46] Strain-induced switching of magnetoresistance and perfect spin-valley filtering in graphene
    Soodchomshom, Bumned
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 44 (03): : 579 - 589
  • [47] Local strain-induced 90° domain switching in a barium titanate single crystal
    Park, J.-H.
    Park, J.
    Lee, K.-B.
    Koo, T.-Y.
    Youn, H. S.
    Ko, Y. D.
    Chung, J.-S.
    Hwang, J. Y.
    Jeong, S.-Y.
    APPLIED PHYSICS LETTERS, 2007, 91 (01)
  • [48] Strain-induced thermal switches with a high switching ratio in monolayer boron sulfide
    Duan, Zhifu
    Ding, Zhongke
    Xie, Fang
    Zeng, Jiang
    Tang, Liming
    Luo, Nannan
    Chen, Keqiu
    APPLIED PHYSICS LETTERS, 2025, 126 (02)
  • [49] Strain-induced switching in field effect transistor based on zigzag graphene nanoribbons
    Azadparvar, Maliheh
    Cheraghchi, Hosein
    PHYSICA B-CONDENSED MATTER, 2021, 622 (622)
  • [50] Multidirectional strain-induced thermoelectric figure of merit enhancement of zigzag bilayer phosphorene nanoribbons
    Sodagar, Shima
    Karbaschi, Hossein
    Soltani, Morteza
    Amini, Mohsen
    PHYSICA SCRIPTA, 2023, 98 (01)