One-Step Sixfold Cyanation of Benzothiadiazole Acceptor Units for Air-Stable High-Performance n-Type Organic Field-Effect Transistors

被引:40
|
作者
Kafourou, Panagiota [1 ,2 ]
Park, Byoungwook [3 ,4 ]
Luke, Joel [2 ,5 ]
Tan, Luxi [6 ]
Panidi, Julianna [2 ,5 ]
Glocklhofer, Florian [1 ,2 ]
Kim, Jehan [2 ,7 ]
Anthopoulos, Thomas D. [8 ]
Kim, Ji-Seon [5 ]
Lee, Kwanghee [3 ,4 ]
Kwon, Sooncheol [3 ,4 ]
Heeney, Martin [1 ,2 ]
机构
[1] Imperial Coll London, Dept Chem, London W12 0BZ, England
[2] Imperial Coll London, Ctr Processable Elect, London W12 0BZ, England
[3] Gwangju Inst Sci & Technol, Heeger Ctr Adv Mat, Gwangju, South Korea
[4] Gwangju Inst Sci & Technol, Res Inst Solar & Sustainable Energies, Gwangju, South Korea
[5] Imperial Coll London, Dept Phys, London SW7 2AZ, England
[6] Chongqing Univ, Sch Chem & Chem Engn, Chongqing 401331, Peoples R China
[7] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang, South Korea
[8] King Abdullah Univ Sci & Technol KAUST, Div Phys Sci & Engn, KAUST Solar Ctr, Thuwal 239556900, Saudi Arabia
基金
英国工程与自然科学研究理事会;
关键词
field effect transistors; fluorine; nucleophilic aromatic substitution; organic electronics; semiconductors;
D O I
10.1002/anie.202013625
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Reported here is a new high electron affinity acceptor end group for organic semiconductors, 2,1,3-benzothiadiazole-4,5,6-tricarbonitrile (TCNBT). An n-type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a sixfold nucleophilic substitution with cyanide on a fluorinated precursor, itself prepared by a direct arylation approach. This one-step chemical modification significantly impacted the molecular properties: the fluorinated precursor, TFBT IDT, a poor ambipolar semiconductor, was converted into TCNBT IDT, a good n-type semiconductor. The electron-deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n-type organic field-effect transistors (OFETs). Solution-processed OFETs based on TCNBT IDT exhibited a charge-carrier mobility of up to mu(e)approximate to 0.15 cm(2) V-1 s(-1) with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach.
引用
收藏
页码:5970 / 5977
页数:8
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