Ferromagnetic Resonance Study of Ga1-x Mn x As Fabricated on (311) GaAs Wafers by Mn Ion Implantation and Pulsed-Laser Melting

被引：4

作者：

Zhou, Y. Y. ^{[1
]}

Liu, X. ^{[1
]}

Furdyna, J. K. ^{[1
]}

Scarpulla, M. A. ^{[2
,3
]}

Dubon, O. D. ^{[2
,3
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2010年 / 23卷 / 01期

关键词：

Ferromagnetic resonance; Magnetic anisotropy; Ion implantation and pulsed-laser melting; (311) GaAs wafers; MAGNETIC SEMICONDUCTORS; ANISOTROPY; (GA; MN)AS;

D O I：

10.1007/s10948-009-0539-9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a ferromagnetic resonance (FMR) study of Ga1-x Mn (x) As fabricated by Mn ion implantation (II) into (311) GaAs wafers followed by pulsed-laser melting (PLM). We measured the angular dependence of FMR at 4 K, and the data were then fitted by Stoner-Wohlfarth model to obtain the cubic and uniaxial anisotropy parameters. The observed angular behavior of FMR can be understood in terms of two contributions: a cubic anisotropy field parallel to the aOE (c) 001 > axes, and a uniaxial anisotropy field parallel to the [311] direction. Our results show that the magnetic anisotropy fields in II-PLM (Ga,Mn)As are fundamentally similar to those in Ga1-x Mn (x) As samples grown by molecular beam epitaxy (MBE), indicating that the two different growth methods lead to materials with very similar magnetic properties.

引用

页码：87 / 90

页数：4