Effect of high-pressure oxygen annealing on Bi2SiO5-added ferroelectric thin films

被引：0
|
作者：
Kijima, T
Kawashima, Y
Idemoto, Y
Ishiwara, H
机构：
[1] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Univ Sci, Noda, Chiba 2788510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 10B期
关键词：
bismuth silicate; Bi2SiO5; chemical solution deposition method; ferroelectric; high-pressure oxygen;
D O I：
10.1143/JJAP.41.L1164
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystallization temperature of typical ferroelectric films Such as PbZr1-xTixO3 (PZT), SrBi2Ta2O9 (SKI), and (Bi,La)(4)Ti3O12 (BLT) was found to decrease by 150 to 200degreesC in a chemical solution deposition method by adding Bi2SiO5 (BSO) in the sol-gel solutions. It was also found that the ferroelectric and insulating characteristics of the BSO-added films were significantly improved by annealing in high-pressure oxygen up to 9.9 atms. Three-orders-of-magnitude improvement of the leakage current density vas observed in BSO-added BLT films after annealing at 9.9 atms, while pronounced increase of the saturation polarization level was observed in BSO-added SBT and PZT films. From cross-sectional transmission electron microscopy (TEM) observations, the origin of the improved characteristics was speculated to be the structural change of the films.
引用
收藏
页码：L1164 / L1166
页数：3
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