Ultrafine and well-defined patterns on silicon through reaction selectivity

被引：0
|
作者：
Prabhakaran, K [1 ]
Hibino, H [1 ]
Ogino, T [1 ]
机构：
[1] NTT Corp, Basic Res Labs, Kanagawa 2430198, Japan
来源：
ADVANCED MATERIALS | 2002年 / 14卷 / 19期
关键词：
D O I：
10.1002/1521-4095(20021002)14:19<1418::AID-ADMA1418>3.0.CO;2-S
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An overview is given on the observation that the reactivity difference of the atoms on a surface can be utilized for selective transformation to various species and can lead to the formation of ultrafine and well-defined patterns on a silica surface. Dissimilarities of the surface atoms are engineered by modifying the substrate.
引用
收藏
页码：1418 / 1421
页数：4
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