Real-Time Aging Monitoring for IGBT Modules Using Case Temperature

被引：112
|
作者：
Wang, Ze [1 ]
Tian, Bo [1 ]
Qiao, Wei [1 ]
Qu, Liyan [1 ]
机构：
[1] Univ Nebraska, Dept Elect & Comp Engn, Power & Energy Syst Lab, Lincoln, NE 68588 USA
来源：
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2016年 / 63卷 / 02期
基金：
美国国家科学基金会;
关键词：
Aging monitoring; case temperature; insulated-gate bipolar transistor (IGBT); power electronic converter; IN-SITU DIAGNOSTICS; POWER; RELIABILITY; PROGNOSTICS;
D O I：
10.1109/TIE.2015.2497665
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Power electronic converters are one of the most fragile components in wind turbines. This paper proposes a two-dimensional (2-D) case temperature-based real-time aging monitoring method for insulated-gate bipolar transistor (IGBT) modules in power converters. By placing two thermal sensors for each switch at the interface between the baseplate of an IGBT module and the cold plate, the thermal parameters containing the aging information of the IGBT module can be obtained to monitor various major aging processes of the IGBT module in real time separately. The proposed method has a low cost and is easy to implement. Simulation and experimental results on a commercial IGBT module are provided to verify the effectiveness of the proposed method.
引用
收藏
页码：1168 / 1178
页数：11
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