Metal-insulator transition in two-dimensional transition metal dichalcogenides

被引:10
|
作者
Moon, Byoung Hee [1 ]
机构
[1] Incheon Natl Univ, Dept Phys, Incheon 22012, South Korea
关键词
Metal-insulator transition; Two dimensions; Transition metal dichalcogenides; Scaling law; Localization; Wigner-Mott transition; Percolation;
D O I
10.1007/s42247-021-00202-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The emergence of layered transition metal dichalcogenides has invigorated interests in the challenging problem of metal-insulator transition in two dimensions. The observed clearly distinctive conductivity dependences on temperature show diverse characteristic features of metal-insulator transition depending on the material thickness from which the relative strength of disorder and carrier-carrier interactions can be modulated. These various properties provoked several different proposals for the responsible transition mechanism, providing ideal testing grounds for the study of two-dimensional metal-insulator transition. In this article, we overview the current progresses and challenging issues in the study of metal-insulator transition in two-dimensional layered transition metal dichalcogenides.
引用
收藏
页码:989 / 998
页数:10
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