Optical and electronic properties of GaNAs/GaAs structures.

被引：0
|
作者：
Buyanova, IA [1 ]
Chen, WM [1 ]
Pozina, G [1 ]
Hai, PN [1 ]
Thinh, NQ [1 ]
Goldys, EM [1 ]
Xin, HP [1 ]
Tu, CW [1 ]
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
来源：
COMMAD 2000 PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/COMMAD.2000.1022995
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.
引用
收藏
页码：483 / 490
页数：8
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