HYDROGENATED AMORPHOUS SILICON (A-SI:H) BASED SOLAR CELL: MATERIAL CHARACTERIZATION AND OPTIMIZATION

被引：0

作者：

Shkrebtii, A. I. ^{[1
]}

Kryuchenko, Yu. V. ^{[2
]}

Kupchak, I. M. ^{[1
,2
]}

Gaspari, F. ^{[1
]}

Sachenko, A. V. ^{[2
]}

Sokolovskyi, I. O. ^{[1
,2
]}

Kazakevitch, A. ^{[1
,3
]}

机构：

[1] Univ Ontario, Inst Technol, Oshawa, ON, Canada

[2] NAS, V Lashkarev Inst Semicond Phys, UA-1960 Kiev, Ukraine

[3] Niagara Coll, Weiland, ON L3C 7L3, Canada

来源：

PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We present first-principles finite temperature molecular dynamics (MD) results of extensively simulated hydrogen bonding and diffusion inside an hydrogenated amorphous silicon (a-Si:H) network. The motivation comes from the necessity of fabricating and characterizing a-Si:H films for solar cells applications grown for an OCE/CMM sponsored project: the "Sonus PV Photovoltaic Highway Traffic Noise Barrier". The main goal of the project is to achieve the integration of fiberglass noise reduction barriers with solar cells by optimizing the films and p-i-n junction parameters and the solar cell design/geometry (top contact grid parameters, in particular) for maximum performance.

引用

页码：1883 / +

页数：2

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