Charge transport in disordered organic field-effect transistors

被引：0
|
作者：
Tanase, C [1 ]
Blom, PWM [1 ]
Meijer, EJ [1 ]
de Leeuw, DM [1 ]
机构：
[1] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
来源：
ORGANIC AND POLYMERIC MATERIALS AND DEVICES-OPTICAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIES | 2002年 / 725卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The transport properties of poly(2,5-thienylene vinylene) (PTV) field-effect transistors (FET) have been investigated as a function of temperature under controlled atmosphere. In a disordered semiconductor as PTV the charge carrier mobility, dominated by hopping between localized states, is dependent on the charge carrier density. The transfer characteristics of PTV FET have been modeled considering the distribution of charge carriers and mobility over the accumulation channel. Good agreement with the experimental data is obtained.
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页码：125 / 129
页数：5
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