Chemical beveling of Si/SiGe structures for structure and material analysis by Raman Spectroscopy

被引：0
|
作者：
Srnanek, R [1 ]
Kinder, R [1 ]
Donoval, D [1 ]
Peternai, L [1 ]
Novotny, I [1 ]
Geurts, J [1 ]
Mc Phail, DS [1 ]
Chater, R [1 ]
Nemcsics, A [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Dept Microelect, Bratislava 81219, Slovakia
来源：
ASDAM '02, CONFERENCE PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bevels through Si/SiGe structures were prepared by chemical etching. The surface of the bevels was smooth and bevel angles were in the range 10(-4) rad. From the Raman spectra along the bevels the thickness and composition of SiGe alloys were determined and compared with photocurrent response spectrum of the structures.
引用
收藏
页码：195 / 198
页数：4
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