Tunneling properties of in-situ-fabricated intrinsic Josephson junctions in Bi2Sr2CaCu2O8+x single crystals

被引:0
|
作者
Doh, YJ [1 ]
Lee, HJ [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
来源
PHYSICA B | 2000年 / 284卷
关键词
in-situ fabrication; intrinsic Josephson effects; Bi-2212; surface junction;
D O I
10.1016/S0921-4526(99)02233-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Slacks of intrinsic Josephson junctions were fabricated on the surface of Bi2Sr2CaCu2O8+x single crystals, using photolithography and Ar-ion etching. The number of junctions in a stack was controlled by the etching time, while the c-axis I-V and R versus T curves were measured in-situ in a vacuum chamber for T down to similar to 13 K. The tunneling resistance and the I-V curves are scaled by the surface junction resistance. The superconductivity of the surface conducting plane in contact with a Au electrode is weakened by the proximity to the normal metal. In a low-bias region, main tunneling properties of a junction are not affected by the presence of other junctions in a stack. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:606 / 607
页数:2
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