Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al2O3 Layer as a Passivation

被引：0
|
作者：
Ryu, Gwon-Heon [1 ]
Kim, Jin-Eui [1 ]
Lee, Tae-Yong [1 ]
Choi, Sie-Young [1 ]
机构：
[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2009年 / 514卷
关键词：
Al2O3 as a passivation; field emitter; porous polysilicon; ELECTROCHEMICAL OXIDATION;
D O I：
10.1080/15421400903241041
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The field emission characteristics of an oxidized porous polysilicon were investigated with different Al2O3/Ti/Pt thickness. The Al2O3/Ti/Pt emitter showed stable electron emission characteristic compared with the conventional Ti/Pt electrode. The Al2O3 layer efficiently blocked the diffusion of emitter metal, which resulted in more reliable emission characteristics. Al2O3/Ti/Pt electrode thickness at 2nm/2nm/7nm showed the highest emission efficiency of 0.37% at Vps-17V. The investigated field emission life time of samples also demonstrated their stability over 40 minutes.
引用
收藏
页码：613 / 618
页数：6
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