The field emission characteristics of a unit pixel of a 7 x 7 array oxidized porous polysilicon field emitter

We fabricated oxidized porous polysilicon (OPPS) field emitters and investigated their field emission characteristics using a Ti/Pt multi-layer electrode of different thicknesses and OPPS emitters, which were patterned in a 7 x 7 array. Each unit pixel of the 7 x 7 array OPPS on the field emitter, with a structure of Pt/OPPS/ n-type Si, was in operation and their field emission characteristics were inuestigated using a thermal oxidation process with a Ti/Pt multi-layer electrode. A non-doped polysilicon layer 1.75 pm is deposited on a heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol in a 1:1 ratio. The Ti/Pt multi-layer electrodes were formed with different thicknesses using a DC sputter. The achieved higher emission efficiency of the Ti/Pt electrode, with thickness of 2 nm/7nm was 1.57% at V-ps = 20 V. The investigated field emission characteristics of the unit pixel also demonstrated good uniformity.