Damage profile of ion-implanted polycarbonate studied using a variable-energy positron beam

被引:5
|
作者
Hirata, K [1 ]
Kobayashi, Y
Hishita, S
Saitoh, Y
机构
[1] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan
[2] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan
[3] Japan Atom Energy Res Inst, Adv Radiat Technol Ctr, Takasaki, Gumma 3701292, Japan
关键词
D O I
10.1016/S0168-583X(99)01195-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Damage in polycarbonate (PC) irradiated with B+, C+, Si+, Cu+, and Au+ ions at energies between 0.19 and 2.4 MeV was studied using a variable-energy positron beam by measuring the Doppler broadening of positron annihilation gamma-rays as a function of incident positron energy. Positron data were plotted, instead of incident positron energy E, as a function of average positron implantation depth normalized to average ion implantation depth. Such plots enable damage distributions produced by ions with different implantation ranges to be compared directly. We found that normalized damage distributions in ion-irradiated PC vary systematically with dimensionless reduced energy proposed by Lindhard et al. (K. Dan. Vidensk. Selsk. Mat.-Fys. Medd. 36 (1968) 10) (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:471 / 475
页数:5
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