Triangular pattern formation on silicon through self-organization of GaN nanoparticles

Nanoparticles of gallium nitride, synthesized by a low-temperature reaction between triethyl gallium and ammonia, were introduced onto silicon wafers containing a thin layer of chemically prepared silicon dioxide. At room temperature, the nanoparticles form unstructured agglomerates on the surface. However, upon annealing the samples beyond the decomposition temperature of the silicon dioxide layer, the gallium nitride particles self-organize to form triangular structures. The pattern formation is attributed to the domain separation associated with the (I x 1)-(7 x 7) surface phase transformation followed by selective incorporation of the nanoparticles. (c) 2006 Elsevier B.V. All rights reserved.