A study of the formation of dark-solitons in semiconductor microcavities

被引:0
|
作者
Cilibrizzi, P. [1 ]
Ohadi, H. [1 ]
Ostatnicky, T. [2 ]
Askitopoulos, A. [1 ]
Langhcin, W. [3 ]
Lagoudakis, P. G. [1 ]
机构
[1] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England
[2] Charles Univ Prague, Fac Math & Phys, Prague 12115, Czech Republic
[3] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, S Glam, Wales
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate the propagation and scattering of polaritons in a planar GaAs microcavity in the linear regime under resonant excitation. The propagation of the coherent polariton wave across an extended defect creates phase and intensity patterns with identical qualitative features previously attributed to dark and half-dark solitons of polaritons. We demonstrate that these features are observed for negligible nonlinearity (i.e. polariton-polariton interaction) and are therefore not sufficient to identify dark-and half-dark solitons. A linear model based on the Maxwell equations is shown to reproduce the experimental observations.
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