Temperature-dependent electrical conductivity in thermally carbonized porous silicon

被引：22
|
作者：
Salonen, J [1 ]
Björkqvist, M [1 ]
Paski, J [1 ]
机构：
[1] Univ Turku, Dept Phys, FIN-20014 Turku, Finland
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2004年 / 116卷 / 03期
基金：
芬兰科学院;
关键词：
porous silicon; thermal carbonization; conductivity; temperature dependence;
D O I：
10.1016/j.sna.2004.05.005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature dependence of the electrical conductivity in thermally carbonized porous silicon has been studied. The temperature dependence of conductivity is dependent on the treatment temperature and on the thickness of the porous layer. Due to the treatment, the resistance is 10(-5) times lower in samples thermally carbonized at 850degreesC than in the as-anodized sample with the same thickness. The resistance-temperature characteristic of the thermally carbonized PSi was found to be well described by a thermistor equation and the temperature sensitivity was found to be good (5%/K at 25 degreesC). (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：438 / 441
页数：4
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