Computer modelling of devices based on AlGaN/GaN heterostructure

被引：0
|
作者：
Kosnikowski, W [1 ]
Piasecki, T [1 ]
机构：
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50370 Wroclaw, Poland
来源：
OPTICA APPLICATA | 2002年 / 32卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Computer simulation of AlGaN/GaN heterostructure heterostructure field effect transitior (HFET) and metal-semiconductor-metal (MSM) photodetector has been performed. The influence of AlGaN layer thickness and background electron concentration, as well as piezoelectric effect, on devices' parameters has been investigated. The results confirm the great importance of keeping low background electron concentration. The superiority of devices with AlGaN layer applied is shown. Thickness of AlGaN layer is not an important factor.
引用
收藏
页码：485 / 491
页数：7
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