X-ray diffraction and Raman studies of rf sputtered polycrystalline silicon germanium films

被引：0
|
作者：
Leoy, CC
Choi, WK
Wong, KL
Wong, KM
Osipowicz, T
Rong, J
机构：
[1] Natl Univ Singapore, Microelect Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[3] Data Storage Inst, Singapore 117608, Singapore
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 28-29期
关键词：
D O I：
10.1142/S0217979202015224
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polycrystalline silicon germanium (Si1-xGex) films were characterized using x-ray diffraction (XRD) and Raman spectroscopy techniques. The XRD results show that our films consist of Si1-xGex alloy with no cluster of Ge or a Ge rich material embedded in a Si matrix. Comparison of the XRD results of RTA and furnace annealed samples for the same annealing conditions reveal that the latter allow for faster formation of the (200) and (311) crystal planes. Raman spectroscopy results indicate that our films were strain free.
引用
收藏
页码：4263 / 4266
页数：4
相关论文
共 50 条
  • [31] X-RAY-DIFFRACTION STUDY OF TEXTURE AND GROWTH OF RF-SPUTTERED CDS FILMS
    BENNOUNA, A
    AMEZIANE, EL
    HAOUNI, A
    GHERMANI, N
    AZIZAN, M
    BRUNEL, M
    SOLAR ENERGY MATERIALS, 1990, 20 (5-6): : 405 - 415
  • [32] In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon
    Bhaskaran, M.
    Sriram, S.
    Perova, T. S.
    Ermakov, V.
    Thorogood, G. J.
    Short, K. T.
    Holland, A. S.
    MICRON, 2009, 40 (01) : 89 - 93
  • [33] X-RAY-DIFFRACTION STUDY OF STRUCTURES OF RF-SPUTTERED CAO AND MGO FILMS
    RATINEN, H
    LEVOSKA, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 24 (01): : K35 - K38
  • [34] Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films
    Choi, WK
    Natarajan, A
    Bera, LK
    Wee, ATS
    Liu, YJ
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2443 - 2448
  • [35] Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films
    Choi, W.K., 1600, American Institute of Physics Inc. (91):
  • [36] X-RAY DIFFRACTION TOPOGRAPHY OF GERMANIUM WAFERS
    SEGMULLER, A
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (06) : 448 - +
  • [37] PHOTOREFLECTANCE AND X-RAY STUDIES OF SILICON FILMS ON SAPPHIRE
    GIORDANA, A
    GLOSSER, R
    PELLEGRINO, JG
    QADRI, S
    RICHMOND, ED
    MATERIALS LETTERS, 1989, 8 (1-2) : 64 - 68
  • [38] ADVANCES IN SYNCHROTRON X-RAY POLYCRYSTALLINE DIFFRACTION
    PARRISH, W
    AUSTRALIAN JOURNAL OF PHYSICS, 1988, 41 (02): : 101 - 112
  • [39] Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction
    Alford, TL
    Zeng, YI
    Zou, YL
    Deng, F
    Lau, SS
    Laursen, T
    Ullrich, BM
    POLYCRYSTALLINE THIN FILMS - STRUCTURE, TEXTURE, PROPERTIES AND APPLICATIONS III, 1997, 472 : 293 - 298
  • [40] Thickness determination of thin polycrystalline films by grazing incidence X-ray diffraction
    Lhotka, J
    Kuzel, R
    Cappuccio, G
    Valvoda, V
    EUROPEAN POWDER DIFFRACTION EPDIC 8, 2004, 443-4 : 115 - 118
12345