X-ray diffraction and Raman studies of rf sputtered polycrystalline silicon germanium films

被引：0
|
作者：
Leoy, CC
Choi, WK
Wong, KL
Wong, KM
Osipowicz, T
Rong, J
机构：
[1] Natl Univ Singapore, Microelect Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[3] Data Storage Inst, Singapore 117608, Singapore
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 28-29期
关键词：
D O I：
10.1142/S0217979202015224
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polycrystalline silicon germanium (Si1-xGex) films were characterized using x-ray diffraction (XRD) and Raman spectroscopy techniques. The XRD results show that our films consist of Si1-xGex alloy with no cluster of Ge or a Ge rich material embedded in a Si matrix. Comparison of the XRD results of RTA and furnace annealed samples for the same annealing conditions reveal that the latter allow for faster formation of the (200) and (311) crystal planes. Raman spectroscopy results indicate that our films were strain free.
引用
收藏
页码：4263 / 4266
页数：4
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