Temperature dependence of the first-order Raman phonon lines in GaS0.25Se0.75 layered crystals

被引：5
|
作者：
Gasanly, NM [1 ]
机构：
[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
来源：
ACTA PHYSICA POLONICA A | 2002年 / 102卷 / 06期
关键词：
D O I：
10.12693/APhysPolA.102.801
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Systematic measurements by Raman scattering. of the frequency and line width of the zone-center optical modes in GaS0.25Se0.75 layered crystal over the temperature, range of 10-300 K are carried out. The analysis of-temperature dependence of intralayer modes shows that frequency shift and line broadening are successfully modeled by including the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.
引用
收藏
页码：801 / 810
页数：10
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