Synchrotron x-ray scattering study on oxidation of AIN/sapphire

被引：0

作者：

Kang, HC ^{[1
]}

Seo, SH ^{[1
]}

Noh, DY ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500762, South Korea

来源：

APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE V | 2000年 / 590卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an x-ray scattering study of the oxidation of AlN/sapphire films into gamma-Al2O3 upon annealing. Epitaxial AlN/Sapphire(0001) transforms into nano-crystalline epitaxial gamma-Al2O3 during annealing at temperatures above 800 OC in air. The crystalline orientational relation between the gamma-Al2O3 and AlN are <111> // <0001> in the film normal direction, and <1 (1) over bar 0> // <11 (2) over bar 0> in the film plane direction. The domain size of the spinel gamma-Al2O3 crystalline is smaller than 50 Angstrom in both out-of-plane and in-plane directions. The XPS depth profiles of the oxide film showed that the film is composed of aluminum and oxygen, and the atomic concentration ratio is about 2:3.

引用

页码：195 / 199

页数：5

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