GaAs(001) (2 x 4) to c(4 x 4) transformation observed in situ by STM during As flux irradiation

被引：5
|
作者：
Bastiman, F. [1 ]
Cullis, A. G. [1 ]
Hopkinson, M. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
SURFACE SCIENCE | 2009年 / 603卷 / 16期
关键词：
Scanning tunnelling microscopy; Molecular beam epitaxy; (2 x 4); c(4 x 4); In vivo; Concurrent; MOLECULAR-BEAM EPITAXY; SCANNING-TUNNELING-MICROSCOPY; MBE GROWTH; SURFACE; RECONSTRUCTION; GA; NUCLEATION; DIFFUSION;
D O I：
10.1016/j.susc.2009.05.015
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated ;reconstructions formed on GaAs(0 0 1) surfaces in the presence of an AS(4) flux. The relationship between the As-rich (2 x 4) and c(4 x 4) surfaces is observed throughout the gradual evolution of the reconstruction transformation. The results suggest that during the initial stage of the transformation, Ga-rich As-terminated variations of the c(4 x 4) form in order to accommodate excess mobile Ga produced by pit formation. These transient structures later planarize, as excess Ga is incorporated at step/island edges. Successive imaging of the same sample area during As-4 irradiation allows point-by-point adatom binding to be analysed in a way inaccessible to MBE-STM systems relying on sample quenching and transfer. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：2398 / 2402
页数：5
相关论文
共 50 条
  • [41] An STM study of the Si(001)(2 x 4)-Dy surface
    Liu, BZ
    Nogami, J
    SURFACE SCIENCE, 2001, 488 (03) : 399 - 405
  • [42] Nucleation in homoepitaxy on β-(2x4) (001) GaAs
    Dmitriev, Dmitriy V.
    Galitsyn, Yuriy G.
    Mansurov, Vladimir G.
    Moshenko, Sergey P.
    Toropov, Alexander I.
    EDM 2007: 8TH INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, 2007, : 53 - 53
  • [43] The Homoepitaxy GaAs on (001)-β(2x4) Surface
    Dmitriev, Dmitn'y V.
    Galitsyn, Yuriy G.
    Moshenko, Sergey P.
    Toropov, Alexander I.
    EDM 2008: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2008, : 12 - 13
  • [44] INTERACTION OF HYDROGEN WITH GAAS (001)-2X4
    LARSEN, PK
    POLLMANN, J
    SOLID STATE COMMUNICATIONS, 1985, 53 (03) : 277 - 281
  • [45] Sb incorporation at GaAs(001)-(2 x 4) surfaces
    Bickel, J. E.
    Pearson, Chris
    Millunchick, J. Mirecki
    SURFACE SCIENCE, 2009, 603 (01) : 14 - 21
  • [46] Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4)
    Winn, Darby L.
    Hale, Michael J.
    Grassman, Tyler J.
    Sexton, Jonathan Z.
    Kummel, Andrew C.
    JOURNAL OF CHEMICAL PHYSICS, 2007, 127 (13):
  • [47] An elevated temperature STM study of the Si(001) c(4x4) surface reconstruction
    Nörenberg, H
    Briggs, GAD
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 637 - 640
  • [48] STM study of a defect-related Si(001)-c(4x4) surface
    Yoshimura, M
    Ueda, K
    ATOMIC RESOLUTION MICROSCOPY OF SURFACES AND INTERFACES, 1997, 466 : 203 - 207
  • [49] Symmetric-asymmetric transformation of an image on GaAs(001)-c(4 x 4)α surface using scanning tunneling microscopy
    Yagyu, Kazuma
    Kaku, Shigeru
    Yoshino, Junji
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (06):
  • [50] SrTiO3(001) reconstructions:: the (2 x 2) to c(4 x 4) transition
    Silly, Fabien
    Newell, David T.
    Castell, Martin R.
    SURFACE SCIENCE, 2006, 600 (17) : L219 - L223
12345