Control of grain size and crystallinity of poly-Si films on quartz by Al-induced crystallization

被引：24

作者：

Chen, Junyi ^{[1
,2
]}

Suwardy, Joko ^{[1
,2
]}

Subramani, Thiyagu ^{[1
]}

Jevasuwan, Wipakorn ^{[1
]}

Takei, Toshiaki ^{[1
]}

Toko, Kaoru ^{[2
]}

Suemasu, Takeshi ^{[2
]}

Fukata, Naoki ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

CRYSTENGCOMM | 2017年 / 19卷 / 17期

关键词：

ALUMINUM-INDUCED CRYSTALLIZATION; POLYCRYSTALLINE SILICON; SOLAR-CELLS; AMORPHOUS-SILICON; LAYER EXCHANGE; SEED LAYERS; GLASS; GROWTH; ORIENTATION; TRANSISTORS;

D O I：

10.1039/c6ce02328b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The crystalline properties of poly-Si films on quartz grown using Al-induced crystallization (AIC) were investigated. The orientation fraction and grain size were controlled by modulating the annealing temperature and sample thickness. The results confirmed the enhancement of (111)-orientation fractions and grain size by lowering the annealing temperature and reducing the thickness. The effects of both parameters, annealing temperature and thickness, on the growth process were investigated, as was the role of the Al layer. We successfully formed (111)-oriented grains up to 384 mu m in size at a rate of 99% in a 50 nm-thick sample annealed at 400 degrees C. Furthermore, the real applications of AIC poly-Si as a growth template were demonstrated through silicon thin-film and nanowire formation.

引用

页码：2305 / 2311

页数：7

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