Control of grain size and crystallinity of poly-Si films on quartz by Al-induced crystallization

被引：24

作者：

Chen, Junyi ^{[1
,2
]}

Suwardy, Joko ^{[1
,2
]}

Subramani, Thiyagu ^{[1
]}

Jevasuwan, Wipakorn ^{[1
]}

Takei, Toshiaki ^{[1
]}

Toko, Kaoru ^{[2
]}

Suemasu, Takeshi ^{[2
]}

Fukata, Naoki ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

CRYSTENGCOMM | 2017年 / 19卷 / 17期

关键词：

ALUMINUM-INDUCED CRYSTALLIZATION; POLYCRYSTALLINE SILICON; SOLAR-CELLS; AMORPHOUS-SILICON; LAYER EXCHANGE; SEED LAYERS; GLASS; GROWTH; ORIENTATION; TRANSISTORS;

D O I：

10.1039/c6ce02328b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The crystalline properties of poly-Si films on quartz grown using Al-induced crystallization (AIC) were investigated. The orientation fraction and grain size were controlled by modulating the annealing temperature and sample thickness. The results confirmed the enhancement of (111)-orientation fractions and grain size by lowering the annealing temperature and reducing the thickness. The effects of both parameters, annealing temperature and thickness, on the growth process were investigated, as was the role of the Al layer. We successfully formed (111)-oriented grains up to 384 mu m in size at a rate of 99% in a 50 nm-thick sample annealed at 400 degrees C. Furthermore, the real applications of AIC poly-Si as a growth template were demonstrated through silicon thin-film and nanowire formation.

引用

页码：2305 / 2311

页数：7

共 50 条

[1] Fabrication of Poly-Si TFT by Al-induced Lateral Crystallization at Low Temperature
RAO Rui 1
2.Dept. of Phys.
SemiconductorPhotonicsandTechnology, 2001, (01) : 17 - 19
[2] Large grain poly-Si thin films by metal induced crystallization of a-Si:H
Albarghouti, MA
Abu-Safe, HH
Naseem, HA
Brown, WD
Al-Jassim, MM
Jones, KM
Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, : 1070 - 1073
[3] Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth
Kurosawa, Masashi
Toko, Kaoru
Kawabata, Naoyuki
Sadoh, Taizoh
Miyao, Masanobu
SOLID-STATE ELECTRONICS, 2011, 60 (01) : 7 - 12
[4] Grain size and structure engineering during Al-induced crystallization for Si thin-film solar cells
Nast, O
CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 284 - 287
[5] Al-induced lateral crystallization of amorphous Si thin films by microwave annealing
Rao Rui
Xu Zhong-yang
Zeng Xiang-bing
Journal of Wuhan University of Technology-Mater. Sci. Ed., 2002, 17 (4): : 25 - 28
[6] Al-induced lateral crystallization of amorphous Si thin films by microwave annealing
Rao, R
Xu, ZY
Zeng, XB
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2002, 17 (04): : 25 - 28
[7] Al-induced lateral crystallization of amorphous Si thin films by microwave annealing
Dept. of Electronics Sci. Technology, Huazhong Univ. of Sci. and Technol., Wuhan 430074, China
Journal Wuhan University of Technology, Materials Science Edition, 2002, 17 (04): : 25 - 28
[8] Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing
饶瑞
JournalofWuhanUniversityofTechnology-MaterialsScience, 2002, (04) : 25 - 28
[9] Super-grain poly-Si by metal induced crystallization of amorphous silicon
Jin, J
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 199 - 205
[10] Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface
Kim, H
Kim, D
Lee, G
Kim, D
Lee, SH
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 74 (1-4) : 323 - 329

← 1 2 3 4 5 →