3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Sensor with 1.8μm-Pixel-Pitch

被引：1

作者：

Kim, Seung-Sik ^{[1
]}

Lee, Gwi-Deok Ryan ^{[1
]}

Park, Sang-Su ^{[1
]}

Shim, Heesung ^{[1
]}

Kim, Dae-Hoon ^{[1
]}

Choi, Minjun ^{[1
]}

Kim, Sangyoon ^{[1
]}

Park, Gyunha ^{[1
]}

Oh, Seung-Jae ^{[1
]}

Moon, Joosung ^{[1
]}

Park, Sungbong ^{[1
]}

Yoon, Sol ^{[1
]}

Jeong, Jihye ^{[1
]}

Park, Sejin ^{[1
]}

Lee, Sanggwon ^{[1
]}

Lee, HaeJung ^{[1
]}

Ryu, Wonoh ^{[1
]}

Kim, Taehyoung ^{[1
]}

Kwon, Doowon ^{[1
]}

Choi, Hyuk Soon ^{[1
]}

Kim, Hongki ^{[1
]}

Go, Jonghyun ^{[1
]}

Kim, JinGyun ^{[1
]}

Lim, Seunghyun ^{[1
]}

Na, HoonJoo ^{[1
]}

Lee, Jae-Kyu ^{[1
]}

Moon, Chang-Rok ^{[1
]}

Song, Jaihyuk ^{[1
]}

机构：

[1] Samsung Elect, Hwaseong, South Korea

来源：

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM | 2022年

关键词：

D O I：

10.1109/IEDM45625.2022.10019515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A voltage-domain global shutter image sensor with 1.8 mu m-pixel-pitch was fabricated based on a 3-layer stacking scheme enabled by pixel-level Cu-to-Cu bonding processes. Excellent sensor performances i.e. ultra-low parasitic light sensitivity less than -130dB, 1.8e-rms of temporal noise, and 14ke- of full-well capacity were achieved, thanks to high-capacity DRAM capacitors, dual vertical-channel transfer gates and high conversion gain (mu V/e-) in a floating diffusion node. It is, to our best knowledge, the smallest global shutter pixel ever reported with superior pixel performances.

引用

页数：4

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