Images of dopant profiles in low-energy scanning transmission electron microscopy

被引:15
|
作者
Merli, PG
Corticelli, F
Morandi, V
机构
[1] CNR IMM, Sez Biol, I-40129 Bologna, Italy
[2] Univ Bologna, Dept Phys, I-40126 Bologna, Italy
[3] Univ Bologna, INFM, I-40126 Bologna, Italy
关键词
D O I
10.1063/1.1528734
中图分类号
O59 [应用物理学];
学科分类号
摘要
A scanning electron microscope is used in transmission mode. The image is formed with secondary electrons, collected by the standard detector, resulting from the conversion of transmitted electrons on a circular disk, covered with MgO smoke, located below the thinned specimen, and centered on the optical axis. Operating in this mode, bright-field images of As dopant profiles in Si, having a peak concentrations of 5 and 2.5 at. % and a spatial extension of about 40 nm, have been observed in cross sectioned specimens. The description of the dopant profiles has a resolution of 6 nm as defined by the spot size of the microscope, equipped with a LaB6 tip, and operating at 30 keV. (C) 2002 American Institute of Physics.
引用
收藏
页码:4535 / 4537
页数:3
相关论文
共 50 条
  • [41] Transmission electron microscopy study of low-energy ion-induced damaged layer
    Kato, J
    Nagatomi, T
    Takai, Y
    SURFACE AND INTERFACE ANALYSIS, 2005, 37 (02) : 256 - 260
  • [43] Low-energy electron transmission experiments on graphite
    Yamane, H
    Setoyama, H
    Kera, S
    Okudaira, KK
    Ueno, N
    PHYSICAL REVIEW B, 2001, 64 (11):
  • [44] Dopant mapping of semiconductors with scanning electron microscopy
    2013, Sumitomo Electric Industries Ltd.
  • [45] Dopant regions imaging in scanning electron microscopy
    Morandi, V
    Merli, PG
    Ferroni, M
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (04)
  • [46] Contrast and resolution versus specimen thickness in low energy scanning transmission electron microscopy
    Morandi, Vittorio
    Merli, Pier Giorgio
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
  • [47] Contrast and resolution versus specimen thickness in low energy scanning transmission electron microscopy
    Morandi, Vittorio
    Merli, Pier Giorgio
    Journal of Applied Physics, 2007, 101 (11):
  • [48] Scanning electron microscopy of dopant distribution in semiconductors
    Merli, PG
    Morandi, V
    Savini, G
    Ferroni, M
    Sberveglieri, G
    APPLIED PHYSICS LETTERS, 2005, 86 (10) : 1 - 3
  • [49] Dopant regions imaging in scanning electron microscopy
    Morandi, Vittorio
    Merli, Pier Giorgio
    Ferroni, Matteo
    Journal of Applied Physics, 1600, 99 (04):
  • [50] Electron microscopy and nanolithography with an integrated low-energy electron beam
    Zlatkin, A
    García, N
    APPLIED PHYSICS LETTERS, 1999, 75 (12) : 1807 - 1809