Electronic structure of Mott insulators studied by inelastic X-ray scattering

被引：178

作者：

Hasan, MZ ^{[1
]}

Isaacs, ED

Shen, ZX

Miller, LL

Tsutsui, K

Tohyama, T

Maekawa, S

机构：

[1] Stanford Univ, Stanford Synchrotron Radiat Lab, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Stanford Linear Accelerator Ctr, Stanford, CA 94305 USA

[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[4] Iowa State Univ, Dept Phys, Ames, IA 50011 USA

[5] Iowa State Univ, Ames Lab, Ames, IA 50011 USA

[6] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

SCIENCE | 2000年 / 288卷 / 5472期

关键词：

D O I：

10.1126/science.288.5472.1811

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than 50 years of research. Well-developed momentum-resolved spectroscopies such as photoemission or neutron scattering cannot probe the full Mott gap. High-resolution resonant inelastic x-ray scattering revealed dispersive charge excitations across the Mott gap in a high-critical temperature parent cuprate (Ca2CuO2Cl2), shedding Light on the anisotropy of the Mott gap. These charge excitations across the Mott gap can be described within the framework of the Hubbard model.

引用

页码：1811 / 1814

页数：4

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