Mg doping and its effect on the semipolar GaN(11(2)over-bar2) growth kinetics

被引：19
|
作者：
Lahourcade, L. [1 ]
Pernot, J. [2 ,3 ]
Wirthmueller, A. [1 ]
Chauvat, M. P. [4 ]
Ruterana, P. [4 ]
Laufer, A. [5 ]
Eickhoff, M. [5 ]
Monroy, E. [1 ]
机构：
[1] INAC SP2M NPSC, CEA Grenoble, Equipe Mixte CEA CNRS Nanophys & Semicond, F-38054 Grenoble, France
[2] CNRS, Inst NEEL, F-38042 Grenoble 9, France
[3] Univ Grenoble 1, F-38042 Grenoble 9, France
[4] CNRS ENSICAEN CEA UCBN, UMR6252, CIMAP, F-14050 Caen, France
[5] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 17期
关键词：
MOLECULAR-BEAM EPITAXY; DOPED GAN; GAN(0001); MAGNESIUM; WURTZITE; DEFECTS;
D O I：
10.1063/1.3256189
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the effect of Mg doping on the growth kinetics of semipolar GaN(11 (2) over bar2) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11 (2) over bar2). We observe an enhancement of Mg incorporation in GaN(11 (2) over bar2) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3256189]
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页数：3
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