Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications

被引：7
|
作者：
Kim, Jongdeog [1 ]
Le, Quan [1 ]
Lee, Munseob [1 ]
Yoo, Hark [1 ]
Lee, Dong-Soo [1 ]
Park, Chang-Soo [2 ]
机构：
[1] ETRI, Res Strategy Lab, Kwangju, South Korea
[2] GIST, Dept Informat & Commun, Kwangju, South Korea
来源：
ETRI JOURNAL | 2009年 / 31卷 / 05期
关键词：
Burst-mode receiver; monolithic amplifier IC; GPON; XG-PON1; QUICK RESPONSE;
D O I：
10.4218/etrij.09.0209.0227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a compact 2 5 Gb/s burst mode receiver using the first reported monolithic amplifier IC developed with 025 mu m SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.
引用
收藏
页码：622 / 624
页数：3
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