Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications

被引:7
|
作者
Kim, Jongdeog [1 ]
Le, Quan [1 ]
Lee, Munseob [1 ]
Yoo, Hark [1 ]
Lee, Dong-Soo [1 ]
Park, Chang-Soo [2 ]
机构
[1] ETRI, Res Strategy Lab, Kwangju, South Korea
[2] GIST, Dept Informat & Commun, Kwangju, South Korea
关键词
Burst-mode receiver; monolithic amplifier IC; GPON; XG-PON1; QUICK RESPONSE;
D O I
10.4218/etrij.09.0209.0227
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a compact 2 5 Gb/s burst mode receiver using the first reported monolithic amplifier IC developed with 025 mu m SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.
引用
收藏
页码:622 / 624
页数:3
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