The crystal perfection improvement of Y1Ba2Cu3O7-x thin films by afterglow plasma process

被引：0
|
作者：
Liu, XZ [1 ]
Li, YR
Tao, BW
Luo, A
Geerk, J
机构：
[1] Univ Elect Sci & Technol China, Inst Informat Mat Sci & Engn, Chengdu 610054, Peoples R China
[2] Forschungszentrum Karlsruhe, Inst Nukl Festkorperphys, D-76021 Karlsruhe, Germany
来源：
THIN SOLID FILMS | 2000年 / 371卷 / 1-2期
关键词：
glow discharge; plasma processing and deposition; sputtering; superconductivity;
D O I：
10.1016/S0040-6090(00)00978-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this article, we report the growth of purely (001) oriented single crystal Y1Ba2Cu3O7-x thin films with excellent crystal perfection by afterglow plasma sputtering. Because of little energetic ion and electron bombardment, the crystal perfection of Y1Ba2Cu3O7-x thin films was significantly improved. The full width at half-maximum value of the rocking curve around the (005) diffraction peak of the films is 0.12 degrees. The experiments demonstrate that the afterglow plasma process is very appropriate for the preparation of high-quality Y1Ba2Cu3O7-x thin films, which are very sensitive to ion bombardment effects. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：231 / 234
页数：4
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