The Effect of Substrate Crystal Orientations on Surface Properties of SiC Thin Layer Grown by MBE

被引：0
|
作者：
Kakuta, Akira [1 ]
Furukawa, Yuji [2 ]
Moronuki, Nobuyuki [1 ]
机构：
[1] Tokyo Metropolitan Univ, Grad Sch Syst Design, Hino, Tokyo 1910065, Japan
[2] Tokyo Univ Agr & Technol, Grad Sch Technol Management, Koganei, Tokyo 1840012, Japan
来源：
JOURNAL OF ADVANCED MECHANICAL DESIGN SYSTEMS AND MANUFACTURING | 2008年 / 2卷 / 04期
关键词：
Silicon Carbide; Molecular Beam Epitaxy; Substrate Crystal Orientation; Mono-Crystal; Mirror Surface;
D O I：
10.1299/jamdsm.2.824
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon carbide is expected to be used as a next-generation material because of its more effective mechanical and electronic properties. The hetero Molecular Beam Epitaxy process may provide a method to form thin layered mono-crystal Silicon carbide on a Silicon substrate. The present paper aims to clarify the relation between the layer's properties and the substrate crystal orientations, especially (100) and (110), and discusses the mechanism of Silicon carbide growth under certain operating conditions through a series of tests and evaluations.
引用
收藏
页码：824 / 832
页数：9
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