Effect of grain size on the ferroelectric properties of Bi3.25La0.75Ti3O12 thin films

被引:10
|
作者
Kim, KT
Kim, CI
Kang, DH
Shim, IW
机构
[1] Chung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South Korea
[2] Chung Ang Univ, Dept Chem, Dongjak Gu, Seoul 156756, South Korea
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 28-29期
关键词
D O I
10.1142/S0217979202015637
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Bi3.25La0.75Ti3O12 (BLT) thin films were prepared by metalorganic decomposition method The effect of grain size on ferroelectric properties' during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increases with increasing grain size. As compared BLT with,small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.
引用
收藏
页码:4469 / 4474
页数:6
相关论文
共 50 条
  • [31] Temperature-dependent fatigue rate in ferroelectric Bi3.25La0.75Ti3O12 thin films
    Hwang, J. Y.
    Lee, S. A.
    Jeong, S. Y.
    Cho, C. R.
    [J]. EUROPHYSICS LETTERS, 2006, 76 (01): : 88 - 94
  • [32] Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films
    X.J. Meng
    J.H. Ma
    J.L. Sun
    T. Lin
    J. Yu
    G.S. Wang
    J.H. Chu
    [J]. Applied Physics A, 2004, 78 : 1089 - 1091
  • [33] Effect of anneling on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by the sol-gel method
    Guo, DY
    Wang, YB
    Yu, J
    Gao, JX
    [J]. JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2005, 20 (04): : 20 - 21
  • [34] Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films
    Meng, XJ
    Ma, JH
    Sun, JL
    Lin, T
    Yu, J
    Wang, GS
    Chu, JH
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (07): : 1089 - 1091
  • [35] Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates
    Hu, ZG
    Ma, JH
    Huang, ZM
    Wu, YN
    Wang, GS
    Chu, JH
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (18) : 3686 - 3688
  • [36] Dielectric, piezoelectric, and ferroelectric properties of grain-orientated Bi3.25La0.75Ti3O12 ceramics
    Liu, Jing
    Shen, Zhijian
    Yan, Haixue
    Reece, Michael J.
    Kan, Yanmei
    Wang, Peiling
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (10)
  • [37] Co-effect of Annealing Temperature and Ambient on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Films
    Li, Jianjun
    Yu, Jun
    Li, Jia
    Yang, Weiming
    Wang, Yunbo
    [J]. INTEGRATED FERROELECTRICS, 2009, 110 : 43 - 54
  • [38] Local observation of ferroelectric Bi3.25La0.75Ti3O12 thin films by atomic force microscopy
    Kim, T. Y.
    Lee, J. H.
    Oh, Y. J.
    Choi, M. R.
    Yoon, H. R.
    Jo, W.
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 : S595 - S599
  • [39] Effect of annealing temperature on electrical properties of ferroelectric Bi3.25La0.75Ti3O12 capacitors
    College of Physics Science and Technology, Hebei University, Baoding 071002, China
    不详
    [J]. Chin. Phys. Lett, 2007, 12 (3559-3562):
  • [40] Effect of annealing temperature on electrical properties of ferroelectric Bi3.25La0.75Ti3O12 capacitors
    Yan Zheng
    Zhang Wei-Tao
    Wang Yi
    Zhang Xin
    Li Li
    Zhao Qing-Xun
    Du Jun
    Liu Bao-Ting
    [J]. CHINESE PHYSICS LETTERS, 2007, 24 (12) : 3559 - 3562