Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation

被引：33
|
作者：
Niwa, Hiroki [1 ]
Suda, Jun [1 ]
Kimoto, Tsunenobu [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期
关键词：
Device simulation; merged-p-i-n-Schottky (MPS) diode; power diode; silicon carbide (SiC); snapback phenomenon;
D O I：
10.1109/TED.2016.2636573
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, ultrahigh-voltage (UHV) SiC devices with hybrid unipolar/bipolar operation are introduced and demonstrated. As the first step of such a device, a merged p-i-n Schottky (MPS) diode with an epitaxial p(+)-anode layer is proposed to reduce the conduction loss of a bipolar device in the lowcurrent region. A "snapback" phenomenon is intensively investigated by analyticalmodeling, device simulation, and experiment and a design guideline of snapback-free hybrid operating MPS diodes is presented. Using the design guideline, snapbackfree MPS diodes are fabricated and forward characteristics are investigated. By using a proper edge termination structure, a UHV SiC MPS diode with breakdown voltage of 11.3 kV is demonstrated.
引用
收藏
页码：874 / 881
页数：8
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