Internal Structuring of Silicon using THz-Repetition-Rate Trains of Ultrashort Pulses

被引：0
|
作者：
Wang, A. [1 ]
Das, A. [1 ]
Grojo, D. [1 ]
机构：
[1] Aix Marseille Univ, CNRS, LP3, UMR7341, F-13288 Marseille, France
来源：
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年
基金：
欧洲研究理事会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We generate and apply trains of infrared femtosecond pulses at the highest achievable repetition-rates. This gives unique multi-timescale control parameters used for improved energy deposition and reliable 3D laser writing deep inside silicon. (C) 2020 The Author(s)
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页数：2
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