Polarization sensitive anisotropic structuring of silicon by ultrashort light pulses

被引：5

作者：

Zhang, Jingyu ^{[1
]}

Drevinskas, Rokas ^{[1
]}

Beresna, Martynas ^{[1
]}

Kazansky, Peter G. ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

FEMTOSECOND LASER-PULSES; FABRICATION; ABLATION;

D O I：

10.1063/1.4928043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Imprinting of anisotropic structures on the silicon surface by double pulse femtosecond laser irradiation is demonstrated. The origin of the polarization-induced anisotropy is explained in terms of interaction of linearly polarized second pulse with the wavelength-sized symmetric crater-shaped structure generated by the linearly polarized first pulse. A wavefront sensor is fabricated by imprinting an array of micro-craters. Polarization controlled anisotropy of the structures can be also explored for data storage applications. (C) 2015 AIP Publishing LLC.

引用

页数：4

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