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Determination of the electrical properties of thermally grown ultrathin nitride films

被引：2
|
作者：
Pic, N
Glachant, A
Nitsche, S
Hoarau, JY
Goguenheim, D
Vuillaume, D
Sibai, A
Chanelière, C
机构：
[1] CNRS, CRMC2, F-13988 Marseille, France
[2] ISEM, F-83000 Toulon, France
[3] ISEN, Dept Phys, CNRS, UMR 8520,IEMN, F-59652 Villeneuve Dascq, France
[4] Inst Natl Sci Appl, CNRS, UMR 5511, LPM, F-69621 Villeurbanne, France
来源：
MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 4-5期
关键词：
D O I：
10.1016/S0026-2714(99)00267-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this work is to obtain the electrical properties of a leaky 2 nm ultrathin thermally grown nitride film using the classical HF C(V) measurements. The substrate Si (100) surface cleaned in UHV is nitrided in a low pressure of nitric oxide (NO) gas at 1050 degrees C, This film is characterized by Auger electron spectroscopy (AES), fourier transform infra red spectroscopy (FTIR), transmission electron microscopy (TEM) and electron energy loss spectrum (EELS), The deposition of a self-assembled insulating monolayer of organic molecules (octadecyltrichlorosilane) on the nitride gives rise to a metal-insulator-semiconductor (MIS) structure, which permits to obtain the electrical properties of the ultrathin nitride film, (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：589 / 592
页数：4
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