A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III-V monolithic integration on silicon

被引：1

作者：

Zhou, Ang ^{[1
]}

Wang, Yan Ping ^{[1
]}

Cornet, Charles ^{[1
]}

Leger, Yoan ^{[1
]}

Pedesseau, Laurent ^{[1
]}

Favre-Nicolin, Vincent ^{[2
]}

Chahine, Gilbert Andre ^{[3
]}

Schulli, Tobias Urs ^{[2
]}

Eymery, Joel ^{[4
]}

Bahri, Mounib ^{[5
]}

Largeau, Ludovic ^{[5
]}

Patriarche, Gilles ^{[5
]}

Durand, Olivier ^{[1
]}

Letoublon, Antoine ^{[1
]}

机构：

[1] Univ Rennes, INSA Rennes, Inst FOTON, CNRS,UMR 6082, F-35000 Rennes, France

[2] ESRF, F-38000 Grenoble, France

[3] Univ Grenoble Alpes, CNRS, Grenoble INP, SIMAP, F-38000 Grenoble, France

[4] Univ Grenoble Alpes, CEA, IRIG, MEM,NRS, F-38000 Grenoble, France

[5] Univ Paris Sud, CNRS, UMR 9001, C2N, F-91120 Palaiseau, France

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2019年 / 52卷

关键词：

misfit dislocations; GaP; Si pseudo-substrates; X-ray scanning diffraction; photonics; DISLOCATIONS; GAAS; SI; GROWTH; MICROSCOPY; ELECTRON; DEFECTS; EVOLUTION; BEHAVIOR;

D O I：

10.1107/S1600576719008537

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A synchrotron-based scanning X-ray diffraction study on a GaP/Si pseudo-substrate is reported, within the context of the monolithic integration of photonics on silicon. Two-dimensional real-space mappings of local lattice tilt and in-plane strain from the scattering spot distributions are measured on a 200nm partially relaxed GaP layer grown epitaxially on an Si(001) substrate, using an advanced sub-micrometre X-ray diffraction microscopy technique (K-Map). Cross-hatch-like patterns are observed in both the local tilt mappings and the in-plane strain mappings. The origin of the in-plane local strain variation is proposed to be a result of misfit dislocations, according to a comparison between in-plane strain mappings and transmission electron microscopy observations. Finally, the relationship between the in-plane strain and the free surface roughness is also discussed using a statistical method.

引用

页码：809 / 815

页数：7

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