Oxidation of nitride bonded silicon carbide in wet air atmosphere

被引:1
|
作者
Gao, W [1 ]
Hendry, A
Holling, G
机构
[1] Univ Petr Beijing, Beijing, Peoples R China
[2] Univ Strathclyde, Dept Engn Mech, Glasgow G1 1XJ, Lanark, Scotland
[3] CeramCo Ltd, Alexandria G83 0TL, Scotland
来源
BRITISH CERAMIC TRANSACTIONS | 2002年 / 101卷 / 06期
关键词
D O I
10.1179/096797802225004027
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The oxidation behaviour of porous nitride bonded silicon carbide (NBSC) ceramics at 1000 and 1200degreesC in air and wet air (20% water vapour by volume) was investigated. A rapid linear oxidation rate occurred during initial exposure (1-3 h) to air and water vapour and this was found to be followed by either parabolic or asymptotic scale growth. Water vapour influences the oxidation of NBSC: compared to oxidation in air, in wet air a higher weight gain is observed resulting from enhanced permeation of H,61 molecules through the scale, and devitrification of amorphous silica is also enhanced.
引用
收藏
页码:231 / 236
页数:6
相关论文
共 50 条
  • [21] MICROSTRUCTURAL CHARACTERIZATION OF SILICON-NITRIDE BONDED SILICON-CARBIDE
    EDWARDS, DP
    MUDDLE, BC
    HANNINK, RHJ
    [J]. SILICON NITRIDE 93, 1994, 89-9 : 417 - 421
  • [22] Study on gelcasting of silicon nitride-bonded silicon carbide refractories
    Yi, ZZ
    Xie, ZP
    Ma, JT
    Huang, Y
    Cheng, YB
    [J]. MATERIALS LETTERS, 2002, 56 (06) : 895 - 900
  • [23] Preparation and Characterization of Silicon Nitride Bonded Silicon Carbide Ultrafiltration Membrane
    Liang, Xin
    Ma, Dong
    Zhou, Sichong
    Huang, Zhiliang
    Chen, Changlian
    [J]. 2018 3RD INTERNATIONAL CONFERENCE ON NEW ENERGY AND RENEWABLE RESOURCES (ICNERR 2018), 2018, 331
  • [24] THE DEVELOPMENT OF MICROSTRUCTURE IN SILICON NITRIDE-BONDED SILICON-CARBIDE
    EDWARDS, DP
    MUDDLE, BC
    CHENG, YB
    HANNINK, RHJ
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1995, 15 (05) : 415 - 424
  • [25] Oxidation and Strength of Silicon Nitride and Carbide.
    Siebels, Johann E.
    [J]. Sprechsaal, 1981, 114 (10): : 766 - 769
  • [26] High-temperature oxidation of silicon carbide and silicon nitride
    Narushima, T
    Goto, T
    Hirai, T
    Iguchi, Y
    [J]. MATERIALS TRANSACTIONS JIM, 1997, 38 (10): : 821 - 835
  • [27] High-temperature oxidation of silicon carbide and silicon nitride
    Tohoku Univ, Sendai, Japan
    [J]. Mater Trans JIM, 10 (821-835):
  • [28] Slip cast nitride-bonded silicon carbide bodies
    Rao, RR
    Kannan, TS
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2002, 75 (1-3) : 270 - 275
  • [29] Quality evaluation of nitride bonded silicon carbide sidelining materials
    Skybakmoen, E
    Stoen, LI
    Kvello, JH
    Darell, O
    [J]. LIGHT METALS 2005, 2005, : 773 - 778
  • [30] MANUFACTURE AND PROPERTIES OF NITRIDE BONDED SILICON-CARBIDE MATERIALS
    KARA, M
    KERBER, A
    [J]. CFI-CERAMIC FORUM INTERNATIONAL, 1995, 72 (06): : 325 - 328