Three-dimensional spin structure in exchange-biased antiferromagnetic/ferromagnetic thin films

被引:24
|
作者
Morales, R. [1 ]
Velez, M. [1 ]
Petracic, O. [2 ]
Roshchin, Igor V. [3 ]
Li, Z. -P. [4 ]
Batlle, X. [5 ,6 ]
Alameda, J. M. [1 ]
Schuller, Ivan K. [4 ]
机构
[1] Univ Oviedo, Dept Fis, CINN, E-33007 Oviedo, Spain
[2] Ruhr Univ Bochum, Inst Expt Phys Festkorperphys, D-44780 Bochum, Germany
[3] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA
[4] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[5] Univ Barcelona, Dept Fis Fonamental, E-08028 Barcelona, Spain
[6] Univ Barcelona, Inst Nanociencia & Nanotecnol IN2UB, E-08028 Barcelona, Spain
关键词
MAGNETIZATION REVERSAL; BILAYERS; MODEL; TEMPERATURE; FERROMAGNET; ASYMMETRY; DOMAINS;
D O I
10.1063/1.3216055
中图分类号
O59 [应用物理学];
学科分类号
摘要
A coexistence of lateral and in-depth domain walls in antiferromagnet/ferromagnet (AF/FM) thin films exhibiting double hysteresis loops (DHLs) is demonstrated. Comparison of single and DHLs together with local and global measurements confirms the formation of two oppositely oriented domains in the AF that imprint a lateral domain structure into the FM layer. Most significantly, the magnetization reversal mechanism within each opposite domain takes place by incoherent rotation of spring-like domain walls extending through the Ni thickness. Therefore, complex three-dimensional domain walls are created perpendicular and parallel to the AF/FM interface in exchange biased systems. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3216055]
引用
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页数:3
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