Inverse spin Hall and spin rectification effects in NiFe/FeMn exchange-biased thin films

被引:6
|
作者
Garcia, W. J. S. [1 ]
Seeger, R. L. [1 ]
da Silva, R. B. [1 ]
Harres, A. [1 ]
机构
[1] Univ Fed Santa Maria, Dept Fis, BR-97105900 Santa Maria, RS, Brazil
关键词
Exchange bias; ISHE; FMR; Spin pumping; MAGNETORESISTANCE;
D O I
10.1016/j.jmmm.2017.06.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Materials presenting high spin-orbit coupling are able to convert spin currents in charge currents. The phenomenon, known as inverse spin Hall effect, promises to revolutionize spintronic technology enabling the electrical detection of spin currents. It has been observed in a variety of systems, usually nonmagnetic metals. We study the voltage emerging in exchange biased Ta/NiFe/FeMn/Ta thin films near the ferromagnetic resonance. Measured signals are related to both inverse spin Hall and spin rectification effects, and two distinct protocols were employed to separate their contributions. The curve shift due to the exchange bias effect may enable high frequency applications without an external applied magnetic field. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:392 / 397
页数:6
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