Observation of Quantum Hall effect in an ultra-thin (Bi0.53Sb0.47)2Te3 film

被引：12

作者：

Zou, Wenqin ^{[1
]}

Wang, Wei ^{[2
]}

Kou, Xufeng ^{[3
]}

Lang, Murong ^{[3
]}

Fan, Yabin ^{[3
]}

Choi, Eun Sang ^{[4
]}

Fedorov, Alexei V. ^{[5
]}

Wang, Kejie ^{[2
]}

He, Liang ^{[2
,3
]}

Xu, Yongbing ^{[2
]}

Wang, Kang. L. ^{[3
]}

机构：

[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, York Nanjing Joint Ctr YNJC Spintron & Nano Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[5] Lawrence Berkeley Natl Lab, Adv Light Source Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 21期

关键词：

TOPOLOGICAL INSULATOR; SURFACE-STATES; DIRAC CONE; BI2SE3; TRANSPORT; BI2TE3; PHASE;

D O I：

10.1063/1.4983684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of the Quantum Hall effect from the topological surface states in both the Dirac electron and Dirac hole regions in a 4 quintuple layer (Bi0.53Sb0.47)(2)Te-3 film grown on GaAs (111) B substrates. The Fermi level is sitting within the enlarged bulk band gap due to the quantum confinement of the ultra-thin film and can be tuned through the Dirac point by gate biases. Furthermore, the Hall resistance R-xy shows even denominator plateaus, which could be fractional Quantum Hall states. This may be due to the hybridization between the top and bottom surface states and suggests the possible way to manipulate the interaction of two surfaces for potential spintronic devices. Published by AIP Publishing.

引用

页数：4

共 50 条

[31] Thermoelectric response of textured Sb2Te3-BiSb and Sb2Te3-Bi2Te3 thin film junctions
Nepal, Rajeev
Bajracharya, Prabesh
Kumar, Ravinder
Kolagani, Rajeswari
Budhani, Ramesh C.
APPLIED PHYSICS LETTERS, 2024, 124 (14)
[32] Macrosegregation of unidirectionally solidified (Bi,Sb)2Te3 in a magnetic field
Yasuda, H
Ohnaka, I
Furukubo, Y
Koh, HJ
Tozawa, S
Fukuda, T
SOLIDIFICATION SCIENCE AND PROCESSING, 1996, : 311 - 317
[33] Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films
Guan Tong
Teng Jing
Wu Ke-Hui
Li Yong-Qing
ACTA PHYSICA SINICA, 2015, 64 (07)
[34] Superconductor-Insulator Transition in Ultra-Thin Sb2Te3 Nanoplates
Kuzanyan, A. A.
Harutyunyan, S. R.
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2022, 57 (01) : 81 - 86
[35] Superconductor-Insulator Transition in Ultra-Thin Sb2Te3 Nanoplates
A. A. Kuzanyan
S. R. Harutyunyan
Journal of Contemporary Physics (Armenian Academy of Sciences), 2022, 57 : 81 - 86
[36] THERMOELECTRIC COOLING EFFECT IN A P-SB2TE3-N-BI2TE3 THIN-FILM THERMOCOUPLE
PATEL, NG
PATEL, PG
SOLID-STATE ELECTRONICS, 1992, 35 (09) : 1269 - 1272
[37] Thermoelectric behaviour of (Bi0.5Sb0.5)2Te3 semiconducting alloy thin films
Das, VD
Mallik, RC
SOLID STATE COMMUNICATIONS, 2001, 120 (5-6) : 217 - 220
[38] Topological phase transitions induced by disorder in magnetically doped (Bi, Sb)2Te3 thin films
Okugawa, Takuya
Tang, Peizhe
Rubio, Angel
Kennes, Dante M.
PHYSICAL REVIEW B, 2020, 102 (20)
[39] Effects of Sb Content (x) on (Bi1-xSbx)2Te3 Thermoelectric Thin Film Deposited by Effusion Cell Evaporator
Yong, Ho
Na, Sekwon
Gang, Jun-Gu
Jeon, Seong-Jae
Hyun, Seungmin
Lee, Hoo-Jeong
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (10) : 8251 - 8256
[40] Aqueous chemical synthesis of nanoscale Bi2(Te,Se)3 and (Bi,Sb)2Te3 thermoelectric compounds
Xu, Yongbin
Ren, Zhongming
Ren, Weili
Deng, Kang
Zhong, Yunbo
MATERIALS LETTERS, 2008, 62 (4-5) : 763 - 766

← 1 2 3 4 5 →